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Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes

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    Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes
    Main :::  Electric vacuum and semiconductor UHF devices. :::  Semiconductor devices :::  Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes ::: 
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    Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes

    Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes

    М 31164,  М 31181,  М 31207, М 31209, М 311103

    Solid-state stabilized low-size generators based on Gunn diodes or IMPATT-diodes, and millimeter waveband functional modules.

    Technical Properties

     

    Parameters

    Acceptable Values

    For IMPATT-diodes

    For Gunn diodes

    М 31164 - 1,2

    М-311103 – 1,2

     

    М 31181

    М 31207

    М 31209

    Waveband, GHz

    48,26 - 49,75

    58,25 - 59,75

    25,86 - 37,5

    34,5 - 36,5

    Range of mechanical sub-tuning towards fixed frequency, MHz, not less than

     ±250

     -

     -

    Output power, μW, continuous

    50

    7,5

    20

    Power supply voltage, V, not exceeding 

    25

    2,0-6,0

    33

    Active element standby current, A

    -

    1,5

    0,05 – 0,08

    Control coil standby current, A

    -

    0,4 - 1,25

    -

    Working current, A

    80 - 180

    -

    -

    Electric re-tuning abruptness by frequency modulation coils, MHz/A, not less than

     -

     30 - 250

     -

    Cooling type – air cooling

    Natural

    To heat release

    (not exceeding      +65 °S)

    Natural

    Load SWCV, not exceeding

    1,35

    1,3

    1,15

    Minimum performance duration, hours

    3000

    5000

    4000

    Weight, g

    100

    1050

    19,5

    Dimensions, mm

    23 х 33,5 х 32,5

    63,5 х 60,5 х 60,5

    16х14х24,7

     
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