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P-I-N – diodes , IMPATT, Gunn diodes, semiconductor switch diodes, semiconductor tuning diodes
P-I-N – diodes (DP – 1 ÷ 12), IMPATT (avalanche transit) - diodes (AD – 0,2; 0,3; 0,4), Gunn diodes (AE – Gunn’s effect-based active elements), semiconductor switch diodes (SD – 2 ÷ 15), semiconductor tuning diodes (TD) Åmiconductor devices applied within semiconductor generators, modulators and attenuators, as well as within waveguide commutation installations. Technical Properties Parameters | Acceptable Values | P-i-n – diodes DP – 1 ÷ 12 | IMPATT - diodes AD –0,2 ÷ 0,4 | Gunn diodes (AE) | Semiconductor diodes | Switching | Tuning | Output power, μW | 3000 | 75 - 100 | 100 - 500 | 75 - 100 | 850 | Direct voltage, V, not exceeding | 0,8 | 0,8 | 0,9 | 0,95 | 0,95 | Direct current, μA, not exceeding | 150 | 50 - 150 | 150 | 12 | 200 | Reverse voltage, V, not less than | 100 | - | - | 16 | 80 | Reverse current, microamperes, not exceeding | 10 | 10 | 20 | 10 | 20 | Break voltage, V | 50 - 100 | 22,5 - 28 | - | 30 - 85 | - | Consumption current, A, not exceeding | - | - | 3 | - | - | Nominal voltage, V | - | 25 - 27 | 6 – 8,5 | - | - | Control current, μA | - | - | 600 | - | - | Capacity, pF | - | 0,4 –0,6 | - | 0,8 - 1,0 | 0,75 – 1,25 | Environment temperature, oC | 25 ± 10 | 25 ± 10 | 25 ± 10 | 25 ± 10 | 25 ± 10 | Minimum performance duration, hours | 5000 | 5000 | 5000 | 5000 | 5000 | Weight, g, not exceeding | 0,05 | 0,3 | 0,9 | 0,05 | 0,05 | Dimensions, mm | 6õ0,7õ0,8 | 6õ0,7õ0,8 | Ø 2 – 3 h =2 - 4 | 6õ0,7õ0,8 | 6õ0,7õ0,8 |
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